Decoupling capacitor on strain relaxation buffer layer

ABSTRACT

An electrical device including a substrate structure including a relaxed region of alternating layers of at least a first semiconductor material and a second semiconductor material. A first region of the substrate structure includes a first type conductivity semiconductor device having a first strain over a first portion of the relaxed region. A second region of the substrate structure includes a second type conductivity semiconductor device having a second strain over a second portion of the relaxed region. A third region of the substrate structure including a trench capacitor extending into relaxed region, wherein a width of the trench capacitor defined by the end to end distance of the node dielectric for the trench capacitor alternates between at least two width dimensions as a function of depth measured from the upper surface of the substrate structure.

BACKGROUND Technical Field

The present disclosure relates to microelectronic devices, such assemiconductor devices composed of strained semiconductor materials andcapacitors.

Description of the Related Art

Complementary Metal-oxide-semiconductor (CMOS) technology is commonlyused for fabricating field effect transistors (FETs) as part of advancedintegrated circuits (IC), such as CPUs, memory, storage devices, and thelike. At the core of FETs, a channel region is formed in an n-doped orp-doped semiconductor substrate on which a gate structure is formed.Depending whether the on-state current is carried by electrons or holes,the FET comes as an n-FET device or a p-FET device. The overallfabrication process may include forming a gate structure over a channelregion connecting source-drain regions within the substrate on oppositesides of the gate, typically with some vertical overlap between the gateand the source-drain region. The dimensions of semiconductor fieldeffect transistors (FETs) have been steadily shrinking over the lastthirty years or so, as scaling to smaller dimensions leads to continuingdevice performance improvements. On-chip decoupling capacitor (DECAP) isdesired in some applications. On-chip capacitors consume a significantchip area. With increasing device scaling, new capacitor arrangementsare being examined.

SUMMARY

In one aspect, an electrical device is provided that includes asubstrate structure including a relaxed region of alternating layers ofat least a first semiconductor material and a second semiconductormaterial. A first region of the substrate structure includes a firsttype conductivity semiconductor device having a first strain over afirst portion of the relaxed region. A second region of the substratestructure includes a second type conductivity semiconductor devicehaving a second strain over a second portion of the relaxed region. Athird region of the substrate structure including a trench capacitorextending into relaxed region, wherein a width of the trench capacitordefined by the end to end distance of the node dielectric for the trenchcapacitor alternates between at least two width dimensions as a functionof depth measured from the upper surface of the substrate structure.

In another embodiment, the electrical device includes a substratestructure including a relaxed region of alternating layers of at least afirst silicon including material and a first silicon and germaniumincluding material. The electrical device includes a first region of thesubstrate structure including an n-type conductivity semiconductordevice on a tensile strain surface of a second silicon includingmaterial present a first portion of the relaxed region composed of thefirst silicon and germanium including material. The electrical devicealso includes a second region of the substrate structure including ap-type conductivity semiconductor device on a compressive strain surfaceof a second silicon and germanium including material over a secondportion of the relaxed region composed of the first silicon andgermanium including material. The second silicon and germanium includingmaterial has a greater germanium content than the first silicon andgermanium including material. The third region of the substratestructure includes a trench capacitor extending into the relaxed region,wherein a width of the trench capacitor defined by the end to enddistance of the node dielectric for the trench capacitor alternatesbetween at least two width dimensions as a function of depth measuredfrom the upper surface of the substrate structure.

In another aspect, a method of forming an electronic device is providedthat includes providing a substrate structure including a relaxed regionof alternating layers of at least a first semiconductor material and asecond semiconductor material. A tensile strained semiconductor materiallayer is formed on a first portion of the relaxed region. A compressivestrained semiconductor material layer is formed on a second portion ofthe relaxed region. An n-type semiconductor device on the tensilestrained semiconductor material layer, and a p-type semiconductor deviceon the compressive strained semiconductor material layer. The method mayfurther include forming a trench capacitor in a third portion of therelaxed region. A width of the trench capacitor may be defined by theend to end distance of the node dielectric for the trench capacitor,which alternates between at least two width dimensions as a function ofdepth measured from the upper surface of the substrate structure.

BRIEF DESCRIPTION OF DRAWINGS

The following detailed description, given by way of example and notintended to limit the disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, wherein likereference numerals denote like elements and parts, in which:

FIG. 1 is a side cross-sectional view depicting one embodiment of asubstrate structure including a relaxed region of alternating layers ofat least a first semiconductor material and a second semiconductormaterial, in accordance with the present disclosure.

FIG. 2 is a side cross-sectional view depicting one embodiment offorming a tensile strained semiconductor material layer on a firstportion of the relaxed region, and a compressive strained semiconductormaterial layer on a second portion of the relaxed region, in accordancewith the present disclosure.

FIG. 3 is a side cross-sectional view depicting forming an n-typesemiconductor device on the tensile strained semiconductor materiallayer, and a p-type semiconductor device on the compressive strainedsemiconductor material layer, in accordance with one embodiment of thepresent disclosure.

FIG. 4 is a side cross-sectional view depicting etching a trench into aportion of the relaxed region that is separate from the portionsunderlying the n-type and p-type semiconductor devices, in accordancewith one embodiment of the present disclosure.

FIG. 5 is a side cross-sectional view depicting one embodiment oflaterally etching one of the first semiconductor material and the secondsemiconductor material selectively to the other of the firstsemiconductor material and the second semiconductor material, inaccordance with the present disclosure.

FIG. 6 is a side cross-sectional view depicting forming a firstelectrode on sidewalls of the first semiconductor material and thesecond semiconductor material that provide the trench, in accordancewith one embodiment of the present disclosure.

FIG. 7 is a side cross-sectional view depicting one embodiment of anelectrical device including a substrate structure having a relaxedsemiconductor region, wherein a first conductivity device is present ona first strained semiconductor surface overlying a first portion of therelaxed semiconductor region, a second conductivity device is present ona second strained semiconductor surface overlying a second portion ofthe relaxed semiconductor region, and a capacitor is present in thirdportion of the relaxed semiconductor region, in accordance with oneembodiment of the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it is to be understood that the disclosed embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments is intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdisclosed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present disclosure. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the embodiments of the disclosure,as it is oriented in the drawing figures. The terms “present on”, and“over” mean that a first element, such as a first structure, is presenton a second element, such as a second structure, wherein interveningelements, such as an interface structure, e.g. interface layer, may bepresent between the first element and the second element. The terms“direct contact” and “contacting” mean that a first element, such as afirst structure, and a second element, such as a second structure, areconnected without any intermediary conducting, insulating orsemiconductor layers at the interface of the two elements. As usedherein, “semiconductor device” refers to an intrinsic semiconductormaterial that has been doped, that is, into which a doping agent hasbeen introduced, giving it different electrical properties than theintrinsic semiconductor. Doping involves adding dopant atoms to anintrinsic semiconductor, which changes the electron and hole carrierconcentrations of the intrinsic semiconductor at thermal equilibrium.Dominant carrier concentration in an extrinsic semiconductor determinesthe conductivity type of the semiconductor. A field effect transistor(FET) is a semiconductor device in which output current, i.e.,source-drain current, is controlled by the voltage applied to a gatestructure to the semiconductor device. A field effect transistor hasthree terminals, i.e., gate structure, source region and drain region.

In some embodiments, the methods and structures disclosed herein providefield effect transistor (FET) semiconductor device having strained basedperformance enhancements. One way to strain the channel region of theFinFET is by growing strain inducing epitaxial material, in which theepitaxial material being grown has different lattice dimensions than thedeposition surface that the epitaxial material is formed on. Forexample, germanium (Ge) that is epitaxially grown on a silicon germanium(SiGe) deposition surface produces a compressive stress that wheninduced on the channel region of a p-type conductivity FinFET increaseshole carrier mobility, and silicon (Si) that is epitaxially grown on asilicon germanium (SiGe) deposition surface produces a tensile stressthat when induced on the channel region of an n-type conductivity FinFETincreases electron carrier mobility. The term “epitaxial material”denotes a semiconductor material that has been formed using an epitaxialgrowth and/or epitaxial deposition process. “Epitaxial growth and/orepitaxial deposition” means the growth of a semiconductor material on adeposition surface of a semiconductor material, in which thesemiconductor material being grown has substantially the samecrystalline characteristics as the semiconductor material of thedeposition surface. In some embodiments, when the chemical reactants arecontrolled, and the system parameters set correctly, the depositingatoms of an epitaxial deposition process arrive at the depositionsurface with sufficient energy to move around on the surface and orientthemselves to the crystal arrangement of the atoms of the depositionsurface. An epitaxial material has substantially the same crystallinecharacteristics as the semiconductor material of the deposition surface.For example, an epitaxial film deposited on a {100} crystal surface willtake on a {100} orientation. The epitaxial deposition process may becarried out in the deposition chamber of a chemical vapor deposition(CVD) apparatus.

Uniaxial compressively strained germanium (Ge) and silicon germanium(SiGe) for p-type field effect transistors, and uniaxial tensilestrained silicon (Si) for n-type field effect transistors, are siliconfriendly and reasonable channel materials to start with to increaseperformance and carrier speed in field effect transistor (FET)semiconductor devices. The methods and structures disclosed hereinprovide tensile strained silicon (Si) including channel regions forn-type semiconductor devices adjacent to strained germanium (Ge)including channel regions for p-type semiconductor devices bothoverlying a relaxed region, e.g., at least partially relaxed region, ofa substrate structure.

The methods and structures disclosed herein also provide a capacitor,such as a decoupling capacitor that is vertically orientated using atrench type arrangement, wherein the trench housing the capacitorextends into the relaxed region of the substrate structure. A“capacitor” is a structure including two electrically conductivematerials separated and insulated from each other by a dielectric forstoring a charge. The electrically conductive materials may be referredto as electrodes. The term “electrode” as used to describe a componentof the capacitor represents one of the two electrically conductivematerials of the capacitor that are separated by the dielectric layer.“Doped portion” as used to describe the outer electrode of the capacitormeans that the portion of the semiconductor substrate about the trenchwhich has been doped to be electrically conductive. A “node dielectriclayer” is the dielectric layer that is present between the electrodes ofthe capacitor.

The methods and structures disclosed herein provide for formingdecoupling capacitors with high capacitance density on a strainrelaxation buffer (SRB) substrate. Strained transistors, e.g., strainedfield effect transistors (FETs), are also formed on the SRB substrate toboost device performance. In one example, a high density capacitance isachieved by forming a super lattice (Si/SiGe/Si/SiGe . . . ) strainrelaxation buffer (SRB) substrate, and then etching one semiconductormaterial, e.g., SiGe, of the SRB substrate selectively to anothersemiconductor material, e.g., Si, of the SRB substrate to form a threedimensional structure with varying widths, e.g., a three dimensionaltrench structure with varying widths. The decoupling capacitor is formedin the three dimensional trench structure having the varying width. Themethods and structures of the present disclosure are now discussed withmore detail referring to FIGS. 1-7.

FIG. 1 depicts one embodiment of forming a strain relaxed buffer (SRB)region 10, i.e., an at least partially relaxed stack of semiconductormaterials, on a substrate 5. As used herein, the term “partiallyrelaxed” as used to describe a semiconductor material means a materialthat is epitaxially formed on a deposition surface, wherein the latticeconstant of the semiconductor material that is epitaxially formed is notthe same as the lattice dimension of the deposition surface. In someembodiments, the material layers of the strain relaxed buffer (SRB)region 10 is composed of at least partially relaxed material, which havea composition that is selected to be as relaxed as possible. In someembodiments, the composition and processing of the at least partiallyrelaxed semiconductor materials in the strain relaxed buffer (SRB)region 10 is set to a target of at least 90% relaxation, in eitherdirection. In some embodiments, the material layers in the strainrelaxed buffer (SRB) region 10 is set to a target ranging from 98% to100% relaxation.

In some embodiments, the strain relaxed buffer (SRB) region 10 includesa first layer of a first semiconductor material 10 a, e.g., silicon andgermanium including material layer, and a second layer of a secondsemiconductor material 10 b, e.g., silicon including material layer,that are in an alternating arrangement. Typically, each material layer10 a, 10 b has a thickness ranging from 10 nm to 40 nm. In someembodiments, the thickness of each material layer 10 a, 10 b in thestrain relaxed buffer (SRB) region 10 ranges from 15 nm to 35 nm. In oneexample, each material layer 10 a, 10 b has a thickness of 30 nm. Thetotal thickness for the entirety of first and second layer of the firstand second semiconductor material 10 a, 10 b that provide the strainrelaxed buffer (SRB) region 10 may range from 1 μm to 5 μm. Thethickness of the upper most material layer for the strain relaxed buffer(SRB) region 10, e.g., first layer of the first semiconductor material(silicon and germanium including material, e.g., SiGe), may be thickerto facilitate the formation of the semiconductor devices in thecomplementary metal oxide semiconductor (CMOS) arrangement.

In some embodiments, the first layer of the first semiconductor materiallayer 10 a has a composition with a lattice dimension that is greaterthan the second layer of the second semiconductor material layer 10 b.The first layer of the first semiconductor material 10 a is typically asilicon (Si) and germanium (Ge) including material layer. In someembodiments, the silicon and germanium including material that providesthe first layer of the first semiconductor material 10 a may be providedby silicon germanium (SiGe). For example, the silicon and germaniumincluding material that provides the first semiconductor material layer10 a of the stress relaxed buffer (SRB) region 10 may be silicongermanium (SiGe) with a germanium concentration ranging from 15 wt. % to35 wt. %. In another example, the silicon and germanium includingmaterial that provides the first semiconductor material layer 10 a iscomposed of silicon germanium (SiGe) having a germanium (Ge)concentration of 25 wt. %. The silicon and germanium including materialthat provides the first semiconductor material 10 a may further includeelements that when mixed with silicon produces a lattice dimension thatis greater than a material layer of pure silicon.

The second layer of the second semiconductor material 10 b is typicallya silicon including material layer. In some embodiments, the siliconincluding material that provides the second layer of the secondsemiconductor material 10 b may include, but is not limited to silicon,single crystal silicon, strained silicon, silicon doped with carbon(Si:C), silicon alloys or any combination thereof. For example, thesilicon including material that provides the second semiconductormaterial 10 b may include greater than 95 wt %. silicon (Si). In anotherexample, the second semiconductor material may include greater than 99wt. % silicon (Si), e.g., 100 wt. % silicon (Si). The silicon includingmaterial that provides the second semiconductor material 10 b mayfurther include elements that when mixed with silicon produces a latticedimension that is less than a material layer of pure silicon, e.g., acombination of silicon and carbon. Elements producing a latticedimension greater than pure silicon (Si), e.g., germanium (Ge), are notincluded in the base composition (the base material does not includen-type or p-type dopants) of the second semiconductor material 10 b.

The substrate 5 that the strain relaxed buffer (SRB) region 10 is formedon may be a semiconductor substrate. The semiconductor substrate mayhave a single crystal, i.e., monocrystalline, crystal structure. In someembodiments, the semiconductor substrate 5 is composed of a siliconincluding material. In some embodiments, the silicon including materialthat provides the semiconductor substrate may include, but is notlimited to silicon, single crystal silicon, strained silicon, silicondoped with carbon (Si:C), silicon alloys or any combination thereof.Although, the semiconductor substrate that is depicted in FIG. 1 is abulk semiconductor substrate, the present disclosure is not limited toonly this embodiment. For example, the semiconductor substrate may alsobe a semiconductor on insulator (SOI) substrate. In some examples, whenthe semiconductor substrate is an SOI substrate, the SOI substrate mayinclude a base semiconductor substrate, a buried insulating layer thatis present on the base semiconductor substrate, and a semiconductor oninsulator (SOI) layer that is present on the buried insulator layer. Insome embodiments, the SOI layer may be composed of a silicon includingmaterial that is similar to the above description of the siliconmaterial for the bulk semiconductor substrate. The buried insulatinglayer may be an oxide, such as silicon oxide. The base semiconductorsubstrate may be a semiconducting material that may include, but is notlimited to, silicon (Si), germanium (Ge), silicon germanium (SiGe),silicon germanium doped with carbon (SiGe:C), germanium alloys, GaAs,InAs, InP as well as other III/V and II/VI compound semiconductors.

In another embodiment, the strain relaxed buffer (SRB) region 10 that isformed on the substrate 5 may be formed using by epitaxial depositionfor each of the first semiconductor material 10 a and the secondsemiconductor material 10 b, in which the first and second semiconductormaterials 10 a, 10 b area formed in an alternating sequence to providethe strain relaxed buffer (SRB) region 10 that is depicted in FIG. 1.The first semiconductor materials 10 a may be epitaxially formed andcomposed of silicon germanium, wherein the silicon sources for epitaxialdeposition may be selected from the group consisting of silane,disilane, trisilane, tetrasilane, hexachlorodisilane, tetrachlorosilane,dichlorosilane, trichlorosilane, methylsilane, dimethylsilane,ethylsilane, methyldisilane, dimethyldisilane, hexamethyldisilane andcombinations thereof, and the germanium gas sources may be selected fromthe group consisting of germane, digermane, halogermane,dichlorogermane, trichlorogermane, tetrachlorogermane and combinationsthereof. The second semiconductor materials 10 b may be epitaxiallyformed and composed of silicon, wherein the silicon sources forepitaxial deposition may be selected from the group consisting ofsilane, disilane, trisilane, tetrasilane, hexachlorodisilane,tetrachlorosilane, dichlorosilane, trichlorosilane, methylsilane,dimethylsilane, ethylsilane, methyldisilane, dimethyldisilane,hexamethyldisilane and combinations thereof.

It is noted that the strain relaxed buffer (SRB) region 10 that isdepicted in FIG. 1 includes five first layers of first semiconductormaterial 10 a and four second layers of second semiconductor material 10b, the present disclosure is not limited to only this example, as theSRB region 10 may be composed of any number of semiconductor materiallayers. For example, the SRB region 10 may be composed any number ofsemiconductor material layers 10 a, 10 b ranging from 5 layers to 30layers. In other examples, the SRB region 10 may be composed of 5 layersto 15 layers of semiconductor material.

FIG. 2 depicts one embodiment of forming a tensile strainedsemiconductor material layer 15 on a first portion of the relaxedregion, i.e., strain relaxed buffer (SRB) region 10, and a compressivestrained semiconductor material layer 20 on a second portion of therelaxed region, i.e., strain relaxed buffer (SRB) region 10. The term“strained” means the presence of a strain, either compressive ortensile, which is developed during preparation of a structure, and cantherefore be retained in the structure without external force, incontrast to an extrinsic stress that is applied to a structure by anexternal force and can only be maintained by maintaining the externalforce. For example, when a semiconductor material, such as silicongermanium (SiGe), has a larger natural lattice dimension than thedeposition surface on which it is formed, such as silicon (Si), and thematerial is epitaxially formed so that it is formed with the latticedimension of the deposition surface, which is less than the material'snatural lattice dimension, than the material being epitaxially formedwill have an intrinsic strain, i.e., intrinsic compressive strain. Inanother example, when a semiconductor material, such as silicon (Si),has a smaller natural lattice dimension, than the deposition surface onwhich it is formed, such as silicon germanium (SiGe), and the materialis epitaxially formed so that it is formed with the lattice dimension ofthe deposition surface, which is more than the material's naturallattice dimension, than the material being formed will have an intrinsicstrain, i.e., an intrinsic tensile strain.

Referring to FIG. 2, in some embodiments, the upper surface of thestrain relaxed buffer (SRB) region 10 is composed of a first layer of afirst semiconductor material 10 a composed of silicon germanium (SiGe)having a germanium (Ge) content of 25 wt. % or less. The tensilestrained semiconductor material layer 15 is composed of a semiconductormaterial composition having a lattice constant that is less than thelattice constant of the upper surface of the strain relaxed bugger (SRB)region 10. In the embodiment that is depicted in FIG. 2, the tensilestrained semiconductor material layer 15 is composed of silicon (Si)when the upper surface of the strain relaxed buffer (SRB) region 10 iscomposed of silicon germanium (SiGe). The compressive strainedsemiconductor material layer 20 is composed of a semiconductor materialcomposition having a lattice constant that is greater than the latticeconstant of the upper surface of the strain relaxed bugger (SRB) region10. In one example, when the upper surface of the strain relaxed buffer(SRB) region 10 is composed of a first layer of a first semiconductormaterial 10 a composed of silicon germanium (SiGe) having a germanium(Ge) content of 25 wt. % or less, the compressive strained semiconductormaterial layer 20 is composed of epitaxially formed silicon germanium(SiGe) having a germanium (Ge) content greater than 25 wt. %, e.g.,having a germanium (Ge) content of 50 wt. % or greater. The tensilestrained semiconductor material 15 and the compressive strainedsemiconductor material 20 are formed using an epitaxial growth process.In some embodiments, the gas sources described above for forming thesilicon and germanium containing semiconductor materials for the strainrelaxation buffer (SRB) region 10 are suitable for forming the tensileand compressive strained semiconductor material layers 15, 20.

The tensile strained semiconductor material layer 15 is formed over afirst region 30 and a third region 40 of the strain relaxed buffer (SRB)region 10, and the compressive strained semiconductor material layer 20is formed over a second region 35 of the strain relaxed buffer (SRB)region 10. It is noted that block masks, e.g., photoresist block masks(not shown), may be used to selectively form the tensile strainedsemiconductor material layers 15 overlying the first region 30 and thethird region 40 of the strain relaxed buffer (SRB) region 10, and thecompressively strained semiconductor material layer 20 overlying thesecond region 35 of the strain relaxed buffer (SRB) region 10. Forexample, a first block mask can formed atop the first region 30 and thethird region 40 leaving the second region 35 exposed. The second region35 is then processed to provide the compressive strained semiconductormaterial layer 20. The first block mask can then be removed, and asecond block mask may be formed over the second region 35 including thecompressive strained semiconductor material layer 20. The second blockmask is not formed over the first region 30 and the third region 40 ofthe strain relaxed buffer (SRB) region 10. Thereafter, the tensilestrained semiconductor material layer 15 can be formed on the exposedsurface of the strain relaxed buffer (SRB) region 10. After forming thetensile strained semiconductor material layer 15, the second block maskmay be removed.

FIG. 2 also depicts one embodiment of forming a plurality isolationregions 25 separating the tensile strained semiconductor material layer15 in the first region 30 from the compressive strained semiconductormaterial 20 in the second region 35, and separating the compressivestrained semiconductor material 20 in the second region 35 from thetensile strained semiconductor material layer 15 in the third region 40.The isolation regions 25 may be formed using photolithography, etchingand deposition processes. More specifically, an etch mask composed of aphotoresist may be patterned to expose the regions, in which theisolation regions 25 are to be formed. Trenches can be in accordancewith the openings in the etch mask using an anisotropic etch process. An“anisotropic etch process” denotes a material removal process in whichthe etch rate in the direction normal to the surface to be etched isgreater than in the direction parallel to the surface to be etched. Oneform of anisotropic etching that is suitable for forming the fintrenches 15 is reactive ion etching. The trenches may then be filledwith a dielectric material to form the isolation regions 25. Thedielectric may be an oxide, e.g., silicon oxide, or nitride, e.g.,silicon nitride, that is deposited using a chemical vapor deposition(CVD) process, such as plasma enhanced chemical vapor deposition(PECVD).

FIG. 3 depicts forming an n-type semiconductor device 45, e.g., n-typefield effect transistors (nFET) on the tensile strained semiconductormaterial layer 15, and a p-type semiconductor device 55, e.g., p-typefield effect transistors (pFET), on the compressive strainedsemiconductor material layer 20. In some embodiments, each n-typesemiconductor device 45 and the p-type semiconductor device 55 includesa gate structure 44, 54 that is formed on the upper surface of thetensile and the compressive strained semiconductor material layers 15,20, and a source region 43, 53 and a drain region 42, 52 that are formedwithin the tensile and the compressive strained semiconductor materiallayer 15, 20, on opposing sides of the gate structures 44, 54. The “gatestructure” functions to switch the semiconductor device from an “on” to“off” state, and vice versa. As used herein, the term “drain region”means a doped region in semiconductor device located at the end of thechannel, in which carriers are flowing out of the transistor through thedrain. As used herein, the term “source region” is a doped region in thesemiconductor device, in which majority carriers are flowing into thechannel.

The gate structures 44, 54 typically include at least one gatedielectric layer and at least one gate conductor layer. In oneembodiment, the at least one gate dielectric layer employed in thepresent disclosure includes, but is not limited to, an oxide, nitride,oxynitride and/or silicates including metal silicates, aluminates,titanates and nitrides. In one example, when the at least one gatedielectric layer is comprised of an oxide, the oxide may be selectedfrom the group including, but not limited to, SiO₂, HfO₂, ZrO₂, Al₂O₃,TiO₂, La₂O₃, SrTiO₃, LaAlO₃, Y₂O₃ and mixture thereof. The physicalthickness of the at least one gate dielectric layer may vary, buttypically, the at least one gate dielectric layer has a thickness from 1nm to 10 nm. In one embodiment, the at least one gate dielectric layerhas a thickness from 1 nm to 3 nm. In one embodiment, the at least onegate dielectric layer for the gate structures 44, 54 may be deposited bychemical vapor deposition (CVD). Variations of CVD processes suitablefor depositing the gate dielectric layers include, but are not limitedto, plasma enhanced chemical vapor deposition (PECVD), metal organicchemical vapor deposition (MOCVD), atomic layer deposition (ALD), andcombinations thereof.

The conductive material that provides the at least one gate conductormay comprise polysilicon, SiGe, a silicide, a metal or ametal-silicon-nitride such as Ta—Si—N. Examples of metals that can beused as the conductive material for the at least one gate conductorinclude, but are not limited to, Al, W, Cu, and Ti or other likeconductive metals. The conductive materials for the at least one gateconductor may be formed by a deposition process, such as CVD,plasma-assisted CVD, plating, and/or sputtering.

Following deposition of the materials layers for the at least one gatedielectric and the at least one gate conductor, the gate structures 44,54 may be defined using photolithography and etch processes. In oneexample, a pattern is produced by applying a photoresist to the surfaceto be etched, exposing the photoresist to a pattern of radiation, andthen developing the pattern into the photoresist utilizing a resistdeveloper. Once the patterning of the photoresist is completed, thesections of the stack of the at least one gate dielectric layer and theat least one gate conductor layer covered by the photoresist areprotected to provide the gate structures 44, 54, while the exposedregions are removed using a selective etching process that removes theunprotected regions. Following formation of the gate structures, thephotoresist may be removed.

The source regions 43, 53 and the drain regions 42, 52 is formed onopposing sides of the gate structures 44, 54. Typically, theconductivity type of the source and drain regions 35, 40 dictates theconductivity type of the device. For example, the source and drainregions 43, 42 of the n-type semiconductor device 45 are doped to ann-type conductivity, and the source and drain regions 53, 52 of thep-type semiconductor device 55 are doped to a p-type conductivity. Asused herein, “p-type” refers to the addition of impurities to anintrinsic semiconductor that creates deficiencies of valence electrons.The p-type conductivity semiconductor devices are typically producedwithin silicon containing materials by doping the source and drainregions with elements from group III-A of the Periodic Table ofElements. In a silicon-containing fin structure, examples of p-typedopants, i.e., impurities, include but are not limited to boron,aluminum, gallium and indium. As used herein, “n-type” refers to theaddition of impurities that contributes free electrons to an intrinsicsemiconductor. N-type conductivity semiconductor devices are typicallyproduced within silicon containing material by doping the source anddrain regions with elements from group V-A of the Periodic Table ofElements. In a silicon containing fin structure, examples of n-typedopants, i.e., impurities, include but are not limited to, antimony,arsenic and phosphorous. The source and drain regions 42, 43, 52, 53 maybe formed after the gate structures 44, 54 using ion implantation. Inother embodiments, raised source and drain regions of in situ dopedepitaxially formed semiconductor material may also be present.

The above description of forming the n-type semiconductor device 45 andthe p-type semiconductor device 55 is for a gate first process. Inanother embodiment, the process sequence for forming the n-typesemiconductor device 45 and the p-type semiconductor device 55 includesa gate last process sequence, which is not depicted in the suppliedfigures. A gate last process includes forming a replacement gatestructure on the channel portion of the semiconductor devices, forming aspacer on the sidewall of the replacement gate structure, forming sourceand drain regions on opposing sides of the replacement gate structure,removing the replacement gate structure, and forming a functional gatestructure in the space once occupied by the replacement gate structure.The replacement gate structure can include sacrificial material thatdefines the geometry of a later formed functional gate structure thatfunctions to switch the semiconductor device from an “on” to “off”state, and vice versa. A process sequence employing a replacement gatestructure may be referred to as a “gate last” process sequence. Bothgate first and gate last process sequences are applicable to the presentdisclosure.

It is also noted, that although the figures and above descriptiondescribe planar semiconductor devices, i.e., planar field effecttransistors (FETs), the present disclosure is not limited to only thisembodiment. Any semiconductor device may be formed in the first region30 and the second region 35 of the structure. For example, the planarsemiconductor devices may be substituted with fin type field effecttransistors (FinFETs).

FIG. 3 further depicts forming an interlevel dielectric layer 60. Theinterlevel dielectric layer 60 may be selected from the group consistingof silicon containing materials such as SiO₂, Si₃N₄, SiOXN_(y), SiC,SiCO, SiCOH, and SiCH compounds, the above-mentioned silicon containingmaterials with some or all of the Si replaced by Ge, carbon dopedoxides, inorganic oxides, inorganic polymers, hybrid polymers, organicpolymers such as polyamides or SiLK™, other carbon containing materials,organo-inorganic materials such as spin-on glasses andsilsesquioxane-based materials, and diamond-like carbon (DLC), alsoknown as amorphous hydrogenated carbon, α-C:H). Additional choices forthe interlevel dielectric layer 60 include any of the aforementionedmaterials in porous form, or in a form that changes during processing toor from being porous and/or permeable to being non-porous and/ornon-permeable. The interlevel dielectric layer 60 may be deposited usingchemical vapor deposition or spin on deposition.

FIG. 4 depicts etching a trench 61 into a portion of the relaxed region,e.g., strain relaxed buffer (SRB) region 10, which is separate from theportions underlying the n-type and p-type semiconductor devices 45, 55.For example, the trench 61 may be formed in a third region 40. Thetrench 61 may be etched into the relaxed region, e.g., strain relaxedbuffer (SRB) region 10, by forming an etch mask 62 overlying theinterlevel dielectric layer 60 having an opening present there throughin the third region 40 overlying the portion of the relaxed region,e.g., strain relaxed buffer (SRB) region 10, in which the trench 61 isto be formed. The etch mask 62 may be composed of a photoresistmaterial. In one example, the etch mask 62 is produced by applying aphotoresist to the surface to be etched, exposing the photoresist to apattern of radiation, and then developing the pattern into thephotoresist utilizing a resist developer. Once the patterning of thephotoresist is completed, the sections of the structure depicted in FIG.4 covered by the photoresist etch mask 62 are protected, while theexposed portions of the interlevel dielectric layer 60 and theunderlying portion of the strain relaxed buffer (SRB) region 10 areremoved using a selective etching process that removes the unprotectedregions.

In some embodiments, following formation of the photoresist etch mask62, the trench is formed using an anisotropic etch step, such asreactive ion etching (RIE). Reactive Ion Etching (RIE) is a form ofplasma etching in which during etching the surface to be etched isplaced on the RF powered electrode. Moreover, during RIE the surface tobe etched takes on a potential that accelerates the etching speciesextracted from plasma toward the surface, in which the chemical etchingreaction is taking place in the direction normal to the surface. Otherexamples of anisotropic etching that can be used at this point of thepresent disclosure include ion beam etching, plasma etching or laserablation.

In some embodiments, the trench 61 may be etched to extend through anentire depth of the strained relaxed buffer (SRB) region 10. In someembodiments, the trench 61 at this point of the process flow of thepresent disclosure has a substantially uniform width W1. In oneembodiment, the width W1 of the trench 61 may range from 50 nm to 500nm. In another embodiment, the width W1 of the trench 61 may range from100 nm to 2000 nm. In yet another embodiment, the width W1 of the trench61 may range from 100 nm to 300 nm.

FIG. 5 depicts one embodiment of laterally etching one of the firstsemiconductor material 10 a and the second semiconductor material 10 bselectively to the other of the first semiconductor material 10 a andthe second semiconductor material 10 b. More specifically, FIG. 5depicts etching the first semiconductor material 10 a, which in someembodiments is composed of silicon germanium (SiGe), selectively to thesecond semiconductor material 10 b, which in some embodiments iscomposed of silicon (Si). The portions of the second layers of thesecond semiconductor material 10 b that are laterally undercut byetching the first layers of the first semiconductor material 10 b may bereferred to as branches.

The term “selective” as used to describe a material removal processdenotes that the rate of material removal for a first material isgreater than the rate of removal for at least another material of thestructure to which the material removal process is being applied. Forexample, in one embodiment, a selective etch may include an etchchemistry that removes a first material selectively to a second materialby a ratio of 10:1 or greater, e.g., 100:1 or greater. The etch processfor recessing the first semiconductor material 10 a may be an isotropicetch. In one embodiment, the etch for laterally etching the firstsemiconductor material 10 a may be a wet chemical etch. In one example,the lateral undercut depicted in FIG. 5 illustrates removing silicongermanium (SiGe) selectively to silicon with a chemistry composed ofhydrogen chloride gas (HCl).

After the lateral etching process, the width of the trench 61 alternatesbetween at least two width dimensions W1, W2 as a function of depthmeasured from the upper surface of the substrate structure, as depictedin FIG. 5. In the embodiment that is depicted in FIG. 5, the width W1 ofthe trench 61 in the portions of the trench 61 passing through thesecond layers of second semiconductor material 10 b is a lesser width ofthe trench 61, while the width W2 of the trench in the portions of thetrench 61 passing through the first layers of first semiconductormaterial 10 a is a greater width of the trench 61.

In some embodiments, the portion of the trench 61 extending through thefirst layers of first semiconductor material 10 a has been widened to asecond width, i.e., width W2, that may be at least 25% greater than thefirst width, i.e., width W1, of the trench 61 passing through the secondlayers of second semiconductor material 10 b. In another embodiment, theportion of the trench 61 extending through the first layers of firstsemiconductor material 10 a has been widened to a width W2 that may beat least 50% greater than the width W1 of the trench 61 passing throughthe second layers of second semiconductor material 10 b. In someembodiments, the aforementioned portion of the trench, i.e., secondwidth W2, can be widened to be 100%-500%, or more then the first trenchwidth W1. For example, if the first trench width is 200 nm, it can bewidened 500 nm each direction. Surface area is one characteristic thatcan be advantageous for capacitors. In another example, the second widthW2 of the trench 61 may range from 100 nm to 1000 nm. In yet anotherexample, the second width W2 of the trench 61 may range from 200 nm to4000 nm. In an even further example, the second width W2 of the trench61 may range from 200 nm to 1000 nm.

The alternating width of the trench 61 between the least two widthdimensions W1, W2 as a function of the trench depth increases thesurface area of the trench sidewalls. This provides for increasedsurface area of the first electrode and node dielectric of the capacitorthat is formed within the trench 61, when compared to a capacitor thatis formed in a similar trench having a uniform width.

FIG. 6 depicts forming a first electrode 65 of the capacitor beingformed in the trench 61 on sidewalls of the first semiconductor material10 a and the second semiconductor material 10 b that provide the trench61. In some embodiments, the first electrode 65 is formed by gas phasedoping the sidewalls of the trench 61, e.g., with an n-type dopant. Thedopant that provides the first electrode 65 may have a concentration ofat least 5×10¹⁹ atoms/cm³′ preferred 2-5×10²⁰ atoms/cm³. In oneembodiment, the gas phase doping is performed at a temperature betweenabout 850° C. to 1000° C. In one embodiment, the gas phase dopingpressure is between about 1-100 Torr. The dopant is may be arsenine orphosphine gas in an inert carrier gas. In one example, when the dopantis arsenic, the dopant precursor gas can be AsH₄.

FIG. 7 depicts depositing a node dielectric layer 70 conformally on thesidewalls of the trench 61. The node dielectric layer 70 is typically aconformal layer. The term “conformal layer” denotes a layer having athickness that does not deviate from greater than or less than 30% of anaverage value for the thickness of the layer. To provide the conformallayer, the node dielectric layer 70 may be deposited using atomic layerdeposition (ALD). In other embodiments, the node dielectric layer 70 maybe deposited using chemical vapor deposition methods, such as plasmaenhanced chemical vapor deposition (PECVD). In some embodiments, thethickness of the node dielectric layer 70 may range from 0.5 nm to 20nm. In other embodiments, the thickness of the node dielectric layer 70may range from 1 nm to 5 nm.

The node dielectric layer 70 may be composed of any dielectric layer,such as oxides, nitride or oxynitride materials. For example, the nodedielectric layer 70 may be composed of silicon oxide (SiO₂), or the nodedielectric layer 70 may be composed of silicon nitride (Si₃N₄). The nodedielectric layer 70 may be a high-k dielectric material. The term“high-k” denotes a material having a dielectric constant that is greaterthan the dielectric constant of silicon oxide (SiO₂). For example, thenode dielectric layer 70 typically has a dielectric constant that isgreater than 4.0. In another example, a high-k dielectric material thatmay be employed for the node dielectric layer 70 has a dielectricconstant that is greater than the 10. In yet another embodiment, thehigh-k dielectric material for the node dielectric layer 70 is comprisedof a material having a dielectric constant ranging from 10 to 30. Thedielectric constants mentioned herein are relative to a vacuum at roomtemperature, i.e., 20° C. to 25° C. Some examples of high-k dielectricmaterials suitable for the node dielectric layer 70 include hafniumoxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanumoxide, lanthanum aluminum oxide, zirconium oxide, zirconium siliconoxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide,barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, lead zinc niobate and combinations thereof. In one example, thenode dielectric layer 70 is hafnium oxide (HfO₂).

Still referring to FIG. 7 following the formation of the node dielectriclayer 70, a second electrode 75 of the trench capacitor is formedfilling the trench 61. The second electrode 75 is typically composed ofa metal containing material, but conductive semiconductors may also beemployed, such as n-type doped polysilicon. Some examples of metals thatare suitable for the second electrode 75 include Ru, Ti, TiN, Ta, TaN,W, Al, Ag, Au, Pt or TiAlCN. In some embodiments to ensure that thetrench 61 is filled without forming voids, the second electrode 75 maybe deposited using atomic layer deposition (ALD). In some embodiments,in which the second electrode 75 is a metal, the second electrode 75 maybe formed using physical vapor deposition (PVD) methods, such asplating, electroplating, electroless plating, sputtering andcombinations thereof.

Following the formation of the decoupling trench capacitor in the trench61, contacts 80 may be formed to the decoupling trench capacitor, then-type semiconductor device 45 and the p-type semiconductor device 55.Forming the contacts 80 may include depositing an interlevel dielectriclayer, forming openings for the capacitors through the interleveldielectric layer using photolithography and etch processes, anddepositing conductive materials for the contacts 80 within the openings.The contacts 80 to the decoupling trench capacitor include contacts withthe first electrode 65 and the second electrode 75. The contacts to eachof the n-type semiconductor device 45 and the p-type semiconductordevice 55 may include contacts to the source and drain regions 42, 43,52, 53 and the gate structures 44, 54. FIG. 7 depicts one embodiment ofan electrical device including a substrate structure 5 including arelaxed region of alternating layers of at least a first semiconductormaterial 10 a and a second semiconductor material 10 b (which may bereferred to as a strain relaxed buffer (SRB) region 10). The firstsemiconductor material 10 a may be a silicon including layer and thesecond semiconductor material 10 b may be a silicon and germaniumincluding layer.

A first region 30 of the substrate structure includes a first typeconductivity semiconductor device 45 having a first strain over a firstportion of the relaxed region. A second region 35 of the substratestructure 5 includes a second type conductivity semiconductor device 55having a second strain over a second portion of the relaxed region. Thefirst region 30 may comprise a tensile strained silicon includingmaterial 15 atop an upper surface of the relaxed region. The first typeconductivity semiconductor device 45 can be an n-type field effecttransistor. The tensile strain typically produces increased electroncarrier mobility, which provides a performance enhancement for n-typeconductivity semiconductor devices. The tensile strain produced withinthe tensile strained silicon including material 15 may range from 200MPa to 3 GPa. The second region 35 may comprise a compressive strainedsilicon and germanium including material 20 atop an upper surface of therelaxed region. The second type conductivity semiconductor device 55 canbe a p-type field effect transistor. The compressive strain typicallyproduces increased hole carrier mobility, which provides a performanceenhancement for p-type conductivity semiconductor devices. Thecompressive strain produced within the compressive strained silicon andgermanium including material 20 may range from 200 MPa to 3 GPa.

Referring to FIG. 7, the third region 40 of the substrate structureincludes the trench capacitor 65, 70, 75 that extends into relaxedregion. The width of the trench capacitor defined by the end to enddistance of the node dielectric 70 for the trench capacitor alternatesbetween at least two width dimensions W1, W2 as a function of depthmeasured from the upper surface of the substrate structure. Thecapacitor includes a first electrode 65 provided by doped sidewalls ofthe relaxed region, a node dielectric 70 formed on the doped sidewallsthat provide the trench that positions the capacitor, and a secondelectrode 75 present on the node dielectric 70 and filling the trench.The first electrode 65 can be provided by an n-type dopant in asemiconductor material that provides the relaxed region. The nodedielectric 70 can be composed of a conformal high-k dielectric material.The second electrode 75 may be composed of a metal.

The varying width of the trench provides for increase surface area,which provides for increased capacitance density for the capacitorformed within the trench when compared to capacitors formed within atrench having a uniform, i.e., non-varying width.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

While the methods and structures of the present disclosure have beenparticularly shown and described with respect to preferred embodimentsthereof, it will be understood by those skilled in the art that theforegoing and other changes in forms and details may be made withoutdeparting from the spirit and scope of the present disclosure. It istherefore intended that the present disclosure not be limited to theexact forms and details described and illustrated, but fall within thescope of the appended claims.

What is claimed is:
 1. A method of forming an electronic devicecomprising: providing a substrate structure including a strain relaxedbuffer region in a relaxed region; forming a tensile strainedsemiconductor material layer on a first portion of the relaxed region;forming a compressive strained semiconductor material layer on a secondportion of the relaxed region; forming a first semiconductor device onthe tensile strained semiconductor material layer and a secondsemiconductor device on the compressive strained semiconductor materiallayer; and forming a trench capacitor in a third portion of the relaxedregion at a depth within the strain relaxed buffer region, wherein awidth of the trench capacitor alternates between at least two widthdimensions, the trench capacitor including a node dielectric onsidewalls of a trench containing said trench capacitor, wherein the nodedielectric extends vertically along a sidewall of an interleveldielectric to provide that an upper surface of the node dielectric iscoplanar with an upper surface of gate structures for said firstsemiconductor device and said second semiconductor device.
 2. The methodof claim 1, wherein the relaxed region is formed on a silicon (Si)substrate.
 3. The method of claim 1, wherein the relaxed regioncomprises a first semiconductor material of silicon and a secondsemiconductor material of silicon germanium comprising 25% germanium orless.
 4. The method of claim 3, wherein the first and secondsemiconductor material layer have a thickness of 45 nm or less.
 5. Themethod of claim 1, wherein the tensile strained semiconductor materiallayer is a silicon (Si) layer that is present on the secondsemiconductor material.
 6. The method of claim 1, wherein thecompressive strained semiconductor material is a silicon and germaniumcontaining layer that is present on the second semiconductor materiallayer.
 7. The method of claim 6, wherein the silicon and germaniumcontaining layer comprises greater than 25% germanium.
 8. The method ofclaim 1, wherein said forming the trench capacitor in the third portionof the relaxed region comprises: etching a trench into a portion of therelaxed region that is separate from the portions underlying the firstand second semiconductor devices; laterally etching one of the firstsemiconductor material and the second semiconductor material selectivelyto the other of the first semiconductor material and the secondsemiconductor material; forming a first electrode on sidewalls of thefirst semiconductor material and the second semiconductor material thatprovide the trench; depositing a node dielectric layer conformally onthe sidewalls of the trench; and filling at least a portion of thetrench with a second electrode.
 9. The method of claim 8, whereinetching the trench comprises an anisotropic etch.
 10. The method ofclaim 8, wherein the lateral etch comprises H₂O₂ wet chemical etching.11. The method of claim 8, wherein the first electrode is formed usinggas phase doping.
 12. The method of claim 8, wherein the node dielectricis a high-k dielectric material.
 13. The method of claim 12, wherein thehigh-k dielectric material is deposited using atomic layer deposition.14. The method of claim 8, wherein the second electrode is a metaldeposited using atomic layer deposition.
 15. A method of forming anelectronic device comprising: providing a substrate structure includinga strain relaxed buffer region in a relaxed region; forming a firststrained semiconductor on a first side of the relaxed region; forming asecond strained semiconductor on a second side of the relaxed region;and forming a trench capacitor in a third portion of the relaxed regionwithin the strain relaxed buffer region, wherein a width of the trenchcapacitor alternates between at least two width dimensions, a nodedielectric of the capacitor being a conformal layer on an entirety of asidewall of a trench containing said trench capacitor, wherein the nodedielectric extends vertically along a sidewall of an interleveldielectric to provide that an upper surface of the node dielectric iscoplanar with an upper surface of gate structures for semiconductordevices present on the first strained semiconductor and the secondstrained semiconductor.
 16. The method of claim 15, wherein the relaxedregion is formed on a silicon (Si) substrate.
 17. The method of claim16, wherein the relaxed region comprises a first semiconductor materialof silicon and a second semiconductor material of silicon germaniumcomprising 25% germanium or less.
 18. The method of claim 17, whereinthe first and second semiconductor material layer have a thickness of 45nm or less.
 19. The method of claim 18, wherein said forming the trenchcapacitor comprises: etching a trench into a portion of the relaxedregion; laterally etching one of the first semiconductor material andthe second semiconductor material selectively to the other of the firstsemiconductor material and the second semiconductor material; forming afirst electrode on sidewalls of the first semiconductor material and thesecond semiconductor material that provide the trench; depositing a nodedielectric layer conformally on the sidewalls of the trench; and fillingat least a portion of the trench with a second electrode.
 20. The methodof claim 19, wherein etching the trench comprises an anisotropic etch.